NHK develops an in-pixel ADC sensor [Technology]
NHKと東大生産研が、1画素にADCまでを積層したセンサーを2014 IEEE International Electron Devices Meetingで報告しています。
その要旨です。
4.2 Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel A/D Converters Fabricated by Direct Bonding of SOI Layers, M. Goto, K. Hagiwara, Y. Iguchi, H. Ohtake, T. Saraya*, M. Kobayashi*, E. Higurashi*, H. Toshiyoshi* and T. Hiramoto*, NHK Science and Technology Research Laboratories, *The University of Tokyo
We report the first demonstration of three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters. Photodiode and inverter layers were directly bonded to provide each pixel with in-pixel A/D conversion. The developed sensor successfully captured images and confirmed excellent linearity with a wide dynamic range of more than 80 dB.
裏面照射でグローバルシャッターなだけでなく、各画素にADCまで組み込んでいます。
以下は、技研公開でもポスター展示された結晶セレンを光電変換物質に使ったセンサーの報告です。こちらはパナソニックとの共同研究なので、製品化が近いかもしれませんね。
4.3 High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline-Selenium-based Heterojunction Photodiode, S. Imura, K. Kikuchi, K. Miyakawa, H. Ohtake, M. Kubota, T. Okino*, Y. Hirose*, Y. Kato* and N. Teranishi**, NHK Science and Technology Research Laboratories, *Panasonic Corporation, **University of Hyogo
We developed a stacked image sensor on the basis of thin-film crystalline-selenium (c-Se) heterojunction photodiode. Tellurium-diffused crystallization of producing uniform c-Se films was used to fabricate c-Se-based photodiodes laminated on complementary metal-oxide-semiconductor (CMOS) circuits, and we present herein the first high-resolution images obtained with such devices.
その要旨です。
4.2 Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel A/D Converters Fabricated by Direct Bonding of SOI Layers, M. Goto, K. Hagiwara, Y. Iguchi, H. Ohtake, T. Saraya*, M. Kobayashi*, E. Higurashi*, H. Toshiyoshi* and T. Hiramoto*, NHK Science and Technology Research Laboratories, *The University of Tokyo
We report the first demonstration of three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters. Photodiode and inverter layers were directly bonded to provide each pixel with in-pixel A/D conversion. The developed sensor successfully captured images and confirmed excellent linearity with a wide dynamic range of more than 80 dB.
裏面照射でグローバルシャッターなだけでなく、各画素にADCまで組み込んでいます。
以下は、技研公開でもポスター展示された結晶セレンを光電変換物質に使ったセンサーの報告です。こちらはパナソニックとの共同研究なので、製品化が近いかもしれませんね。
4.3 High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline-Selenium-based Heterojunction Photodiode, S. Imura, K. Kikuchi, K. Miyakawa, H. Ohtake, M. Kubota, T. Okino*, Y. Hirose*, Y. Kato* and N. Teranishi**, NHK Science and Technology Research Laboratories, *Panasonic Corporation, **University of Hyogo
We developed a stacked image sensor on the basis of thin-film crystalline-selenium (c-Se) heterojunction photodiode. Tellurium-diffused crystallization of producing uniform c-Se films was used to fabricate c-Se-based photodiodes laminated on complementary metal-oxide-semiconductor (CMOS) circuits, and we present herein the first high-resolution images obtained with such devices.
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